NOTE: Copyrights for certain articles may have been transferred to the appropriate publishers. Reprints available from this site are provided for personal research use only.

    B. Conference Proceedings, Book Publications, Etc. (Partial List):


  1. D. H. Chow, J. R. Soderstrom, D. A. Collins, D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "Novel InAs/GaSb/AlSb Tunnel Structures," in Quantum-Well and Superlattice Physics III, SPIE Vol. 1283 (Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington, 1990), p. 2.

  2. E. T. Yu, E. T. Croke, T. C. McGill, and R. H. Miles, "Measurement of the Strain Dependence of the Si/Ge (100) Valence Band Offset," in Growth of Semiconductor Structures and High Tc Thin Films on Semiconductors, SPIE Vol. 1285 (Society of Photo-Optical Instrumentation Engineers, Bellingham, Washington, 1990), p. 212.

  3. E. T. Yu, M. C. Phillips, D. H. Chow, D. A. Collins, and T. C. McGill, "Measurement of Band Offsets in III-V/II-VI Semiconductor Heterostructures," Bull. Am. Phys. Soc. 35, 416 (1990).

  4. D. A. Collins, D. H. Chow, E. T. Yu, D. Z.-Y. Ting, J. R. Soderstrom , Y. Rajakarunanayake, and T. C. McGill, "InAs/GaSb/AlSb: The Material System of Choice for Novel Tunneling Devices," in Resonant Tunneling in Semiconductors, ed. by L. L. Chang and E. E. Mendez (Plenum Press, New York, 1991), p. 515 (1991).

  5. D. Z.-Y. Ting, E. T. Yu, D. A. Collins, D. H. Chow, and T. C. McGill, "Modeling InAs/GaSb/AlSb Interband Tunnel Structures," in Computational Electronics: Semiconductor Transport and Device Simulation (Kluwer Academic Publishers, Dordrecht, Netherlands, 1991), p. 189.

  6. E. T. Yu, Y. Rajakarunanayake, M. C. Phillips, J. O. McCaldin, and T. C. McGill, "Heterojunction Approaches to Light Emitters: The Role of Band Offsets," Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, Sendai, Japan (1990).

  7. D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "Theoretical Studies of Current Transport in Interband Tunnel Structures Using the Effective Bond Orbital Model," 1990 International Electron Devices Meeting Technical Digest, 31.6.1 (1990).

  8. M. B. Johnson, H. W. M. Salemink, O. Albrektsen, and E. T. Yu, "Atomic Scale View of Epitaxial Layers with Cross-Sectional STM," in Low-Dimensional Systems: New Concepts, Proceedings of the Seventh International Winter School, Mauterndorf, Austria (Springer-Verlag, New York, 1992), p. 108.

  9. R. M. Feenstra, A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall, and G. D. Pettit, "Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces," in Semiconductor Interfaces at the Sub-Nanometer Scale, ed. by H. W. M. Salemink and M. D. Pashley, Proceedings of the NATO Advanced Research Workshop on Physical Properties of Semiconductor Interfaces at Sub-Nanometer Scale, Riva del Garda, Italy (Kluwer Academic Publishers, The Netherlands, 1993) p. 127.

  10. M. B. Johnson, U. Maier, H. P. Meier, H. Salemink, E. T. Yu, and S. S. Iyer, "Atomic-Scale View of Epitaxial Layers with Cross-Sectional STM," in Semiconductor Interfaces at the Sub-Nanometer Scale, ed. by H. W. M. Salemink and M. D. Pashley, Proceedings of the NATO Advanced Research Workshop on Physical Properties of Semiconductor Interfaces at Sub-Nanometer Scale, Riva del Garda, Italy (Kluwer Academic Publishers, The Netherlands, 1993).

  11. A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, "Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy," Mat. Res. Soc. Symp. Proc. 340, 237 (1994).

  12. A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, "Investigation of Arsenide/Phosphide Heterostructures by Scanning Tunneling Microscopy," Bull. Am. Phys. Soc. 40, 256 (1995).

  13. A. Y. Lew, S. L. Zuo, E. T. Yu, and R. H. Miles, "Anisotropy in Interface Roughness and Mobility in InAs/GaInSb Superlattices," Mat. Res. Soc. Symp. Proc. 448, 147 (1997).

  14. Q. Z. Liu, K. V. Smith, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, "On the Epitaxy of Metal Films on GaN," Mat. Res. Soc. Symp. Proc. 449, 1079 (1997).

  15. Q. Z. Liu, L. S. Yu, K. V. Smith, F. Deng, C. W. Tu, P. M. Asbeck, E. T. Yu, and S. S. Lau, "Metal-GaN Contact Technology," Electrochemical Society Proceedings 97-34, 11 (1998).

  16. E. T. Yu, "Nanoscale Characterization of Device Structures by Scanning Tunneling Microscopy (Invited)," 1997 Conference on Challenges in Predictive Process Simulation Meeting Abstracts, Tu-1910 (1997).

  17. E. T. Yu, P. M. Asbeck, S. S. Lau, and G. J. Sullivan, "Piezoelectric Effects in AlGaN/GaN Heterostructure Field-Effect Transistors," Electrochemical Society Proceedings 98-2, 468 (1998).

  18. X. Z. Dang, E. T. Yu, K. S. Boutros, and J. M. Redwing, "Characterization of defect levels in n-type Al0.15Ga0.85N/GaN heterostructures," 40th Electronic Materials Conference Abstracts, p. 42 (1998).

  19. P. A. Rosenthal, E. T. Yu, R. L. Pierson, and P. J. Zampardi, "Cross-sectional Kelvin probe force microscopy of epitaxial layers for heterojunction bipolar transistors," 40th Electronic Materials Conference Abstracts, p. 6 (1998).

  20. E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, "Piezoelectric enhancement of Schottky barrier heights in GaN/AlGaN HFET structures," 56th Annual Device Research Conference Digest, 116 (1998).
    PDF reprint

  21. E. T. Yu, S. L. Zuo, and A. Y. Lew, "An atomic-scale view of semiconductor heterostructures using scanning tunneling microscopy (Invited)," Proceedings of the 5th International Conference on Solid-State and Integrated Circuit Technology, 657 (1998).
    PDF reprint

  22. D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, "Nanoscale charge transport properties of Co/SiO2 multilayer structures and their application in a novel magnetic field sensor," 41st Electronic Materials Conference Abstracts, p. 23 (1999).

  23. K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Local electronic structure of AlGaN/GaN heterostructures probed by scanning capacitance microscopy," 41st Electronic Materials Conference Abstracts, p. 27 (1999).

  24. C. C. Shi, P. M. Asbeck, and E. T. Yu, "Surface potential effects due to the piezoelectric charge associated with dislocations in GaN," 41st Electronic Materials Conference Abstracts, p. 27 (1999).

  25. C. H. Yun, A. B. Wengrow, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, "Ion-cut silicon layer transfer with patterned implantation of hydrogen," Electrochemical Society Proceedings 99-3, 125 (1999).

  26. X. Z. Dang, P. M. Asbeck, E. T. Yu, K. S. Boutros, and J. M. Redwing, "Long time-constant trap effects in nitride heterostructure field-effect transistors," Mat. Res. Soc. Symp. Proc. 622, T.28.1-6 (2000).
    PDF reprint

  27. K. V. Smith and E. T. Yu, "Analysis of localized charge trapping behavior in AlGaN/GaN heterostructures," Proceedings of the IEEE 27th International Symposium on Compound Semiconductors, 1 (2000).

  28. D. M. Schaadt and E. T. Yu, "Frequency response of trap states in an AlxGa1-xN/GaN heterostructure field-effect transistor measured at the nanoscale by dC/dV spectroscopy," Mat. Res. Soc. Symp. Proc. 680E, E6.1 (2001).
    PDF reprint

  29. L. Jia, D. Keogh, L. S. Yu, S. S. Lau, E. T. Yu, P. M. Asbeck, P. Miraglia, A. Roskowski, and R. F. Davis, "I-V characteristics of polarization-induced barriers in AlGaN/GaN heterostructures," 2001 International Semiconductor Device Research Symposium Proceedings, p. 201 (2001).
    PDF reprint

  30. L. S. Yu and E. T. Yu, "Characterization of Schottky contacts on nitride semiconductors," in III-V Nitride Semiconductors: Applications and Devices, E. T. Yu and O. Manasreh, eds. (Taylor & Francis, 2003), pp. 67-105.

  31. E. T. Yu, "Spontaneous and piezoelectric polarization effects in nitride heterostructures," in III-V Nitride Semiconductors: Applications and Devices, E. T. Yu and O. Manasreh, eds. (Taylor & Francis, 2003), pp. 161-191.
    PDF preprint

  32. C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, and Y. Arakawa, eds., GaN and Related Alloys - 2002 (Materials Research Society, 2003), xxi+862pp.

  33. B. S. Simpkins, E. T. Yu, P. Waltereit, and J. S. Speck, "Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy," Mat. Res. Soc. Symp. Proc. 743, 35 (2003).
    PDF reprint



Last updated: 8/28/07
Ed Yu
ety@ece.ucsd.edu