NOTE: Copyrights for certain articles may have been transferred to the appropriate publishers. Reprints available from this site are provided for personal research use only. A. Refereed Journal Publications: E. T. Yu and T. C. McGill, "III-V/II-VI Double-Barrier Resonant Tunneling Structures," Appl. Phys. Lett. 53, 60 (1988). E. T. Yu, D. H. Chow, and T. C. McGill, "Commutativity of the GaAs/AlAs (100) Valence Band Offset," Phys. Rev. B 38, 12764 (1988). E. T. Yu, M. K. Jackson, and T. C. McGill, "Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures," Appl. Phys. Lett. 55, 744 (1989). E. T. Yu, D. H. Chow, and T. C. McGill, "Commutativity of the GaAs/AlAs (100) Valence Band Offset," J. Vac. Sci. Technol. B 7, 391 (1989). D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, "Large Peak-to-Valley Current Ratios in Triple Barrier Heterostructures," Solid-State Electron. 32, 1095 (1989). E. T. Yu, E. T. Croke, T. C. McGill, and R. H. Miles, "Measurement of the Valence Band Offset in Strained Si/Ge (100) Heterojunctions by X-Ray Photoelectron Spectroscopy," Appl. Phys. Lett. 56, 569 (1990). J. R. Soderstrom, E. T. Yu, M. K. Jackson, Y. Rajakarunanayake, and T. C. McGill, "Two Band Modelling of Narrow Bandgap and Interband Tunneling Devices," J. Appl. Phys. 68, 1372 (1990). D. H. Chow, E. T. Yu, J. R. Soderstrom, D. Z.-Y. Ting, and T. C. McGill, "Negative Differential Resistance Due to Resonant Interband Tunneling of Holes," J. Appl. Phys. 68, 3744 (1990). D. Z.-Y. Ting, E. T. Yu, D. A. Collins, D. H. Chow, and T. C. McGill, "Modeling of Novel Heterojunction Tunnel Structures," J. Vac. Sci. Technol. B 8, 810 (1990). E. T. Yu, E. T. Croke, D. H. Chow, D. A. Collins, M. C. Phillips, T. C. McGill, J. O. McCaldin, and R. H. Miles, "Measurement of the Valence Band Offset in Novel Heterojunction Systems: Si/Ge (100) and AlSb/ZnTe (100)," J. Vac. Sci. Technol. B 8, 908 (1990). D. A. Collins, D. H. Chow, D. Z.-Y. Ting, E. T. Yu, J. R. Soderstrom, and T. C. McGill, "Evidence for Coherent Interaction Between Quantum Well States in AlAs/GaAs Triple Barrier Heterostructures," Superlattices and Microstructures 8, 455 (1990). D. A. Collins, E. T. Yu, Y. Rajakarunanayake, J. R. Soderstrom, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, "Experimental Observation of Negative Differential Resistance from an InAs/GaSb Interface," Appl. Phys. Lett. 57, 683 (1990). D. Z.-Y. Ting, D. A. Collins, E. T. Yu, D. H. Chow, and T. C. McGill, "Large Peak Current Densities in Novel Resonant Interband Tunneling Heterostructures," Appl. Phys. Lett. 57, 1257 (1990). D. A. Collins, D. Z.-Y. Ting, D. H. Chow, E. T. Yu, J. R. Soderstrom, Y. Rajakarunanayake, and T. C. McGill, "Interband Tunneling in InAs/GaSb/AlSb Heterostructures," J. Cryst. Growth 111, 664 (1991). M. C. Phillips, E. T. Yu, Y. Rajakarunanayake, J. O. McCaldin, D. A. Collins, and T. C. McGill, "Characterization of CdSe/ZnTe Heterojunctions," J. Cryst. Growth 111, 820 (1991). D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "The Role of Heavy-Hole States in Interband Tunnel Structures," Appl. Phys. Lett. 58, 292 (1991). E. T. Yu, D. A. Collins, D. Z.-Y. Ting, D. H. Chow, and T. C. McGill, "Demonstration of Resonant Transmission in InAs/GaSb/InAs Interband Tunneling Devices," Appl. Phys. Lett. 57, 2675 (1990). D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "Band Structure Effects on Interband Tunnel Structures," J. Vac. Sci. Technol. B 9, 2405 (1991). E. T. Yu, M. C. Phillips, J. O. McCaldin, and T. C. McGill, "Measurement of the CdSe/ZnTe Valence Band Offset by XPS," J. Vac. Sci. Technol. B 9, 2233 (1991). D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "Effect of Band Mixing on Hole Tunneling Times in GaAs/AlAs Double Barrier Heterostructures," Phys. Rev. B 45, 3576 (1992). D. Z.-Y. Ting, E. T. Yu, and T. C. McGill, "Multiband Treatment of Quantum Transport in Interband Tunnel Devices," Phys. Rev. B 45, 3583 (1992). E. T. Yu, M. C. Phillips, D. H. Chow, D. A. Collins, M. W. Wang, J. O. McCaldin, and T. C. McGill, "Interfacial Reactions and Band Offsets in the AlSb/GaSb/ZnTe Material System," Phys. Rev. B 46, 13379 (1992). E. T. Yu, M. B. Johnson, and J.-M. Halbout, "Electrical Profiling of Si (001) p-n Junctions by Scanning Tunneling Microscopy," Appl. Phys. Lett. 61, 201 (1992). R. M. Feenstra, E. T. Yu, J. M. Woodall, P. D. Kirchner, C. Lin, and G. D. Pettit, "Cross-Sectional Imaging and Spectroscopy of GaAs Doping Superlattices by Scanning Tunneling Microscopy," Appl. Phys. Lett. 61, 795 (1992). E. T. Yu, M. B. Johnson, V. P. Kesan, J.-M. Halbout, and S. S. Iyer, "Cross-Sectional Scanning Tunneling Microscopy of MBE-Grown Si p-n Junctions and Si/SiGe Superlattices," J. Cryst. Growth 127, 435 (1993). E. T. Yu, M. B. Johnson, A. R. Powell, J.-M. Halbout, and S. S. Iyer, "Scanning Tunneling Microscopy and Spectroscopy of Si-Based Heterostructures," J. Vac. Sci. Technol. B 11, 1149 (1993). E. T. Yu, J.-M. Halbout, A. R. Powell, and S. S. Iyer, "Scanning Tunneling Microscopy and Spectroscopy of Si/SiGe (001) Superlattices," Appl. Phys. Lett. 61, 3166 (1992). M. W. Wang, M. C. Phillips, J. F. Swenberg, E. T. Yu, J. O. McCaldin, and T. C. McGill, "n-CdSe/p-ZnTe Based Wide Band-Gap Light Emitters - Numerical Simulation and Design," J. Appl. Phys. 73, 4660 (1993). E. T. Yu, J. O. McCaldin, and T. C. McGill, "Band Offsets in Semiconductor Heterojunctions," Solid State Phys. 46, 1 (1992). PDF reprint M. W. Wang, J. F. Swenberg, R. J. Miles, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, "Measurement of the MgSe/Cd0.54Zn0.46Se Valence Band Offset by X-ray Photoelectron Spectroscopy," J. Cryst. Growth 138, 508 (1994). M. W. Wang, J. F. Swenberg, M. C. Phillips, E. T. Yu, J. O. McCaldin, R. W. Grant, and T. C. McGill, "X-Ray Photoelectron Spectroscopy Measurement of Valence Band Offsets for Mg-Based Semiconductor Compounds," Appl. Phys. Lett. 64, 3455 (1994). A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, "Scanning Tunneling Microscopy of InAs/Ga1-xInxSb Superlattices," Appl. Phys. Lett. 65, 201 (1994). A. Y. Lew, C. H. Yan, R. B. Welstand, J. T. Zhu, C. W. Tu, E. T. Yu, and P. K. L. Yu, "Interface Structure in Arsenide/Phosphide Heterostructures Grown by Gas-Source MBE and Low-Pressure MOVPE," J. Elec. Mater. 26, 64 (1997). A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, "Characterization of Arsenide/Phosphide Heterostructure Interfaces by Scanning Tunneling Microscopy," Appl. Surf. Sci. 104, 522 (1996). C. H. Yan, A. Y. Lew, E. T. Yu, and C. W. Tu, "P2 Induced P/As Exchange on GaAs During Gas-Source Molecular-Beam Epitaxy Growth Interruption," J. Cryst. Growth 164, 77 (1996). E. T. Yu, K. Barmak, P. Ronsheim, M. B. Johnson, P. McFarland, and J.-M. Halbout, "Two-Dimensional Profiling of Shallow Junctions in Si Metal-Oxide-Semiconductor Structures Using Scanning Tunneling Spectroscopy and Transmission Electron Microscopy," J. Appl. Phys. 79, 2115 (1996). A. Y. Lew, C. H. Yan, C. W. Tu, and E. T. Yu, "Characterization of Arsenide/Phosphide Heterostructure Interfaces Grown by Gas-Source Molecular-Beam Epitaxy," Appl. Phys. Lett. 67, 932 (1995). A. Y. Lew, E. T. Yu, and Y.-H. Zhang, "Atomic-Scale Structure of InAs/InAsSb Superlattices Grown by Modulated Molecular-Beam Epitaxy," J. Vac. Sci. Technol. B 14, 2940 (1996). B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. Bair, and J. W. Mayer, "Band Offsets in Si/Si1-x-yGexCy Heterojunctions Measured by Admittance Spectroscopy," Appl. Phys. Lett. 70, 3413 (1997). PDF reprint Y.-H. Zhang, A. Y. Lew, E. T. Yu, and Y. Chen, "Microstructural Properties of InAs/InAs1-xSbx Superlattices and InAs1-xSbx Ordered Alloys Grown by Modulated Molecular Beam Epitaxy," J. Cryst. Growth 175/176, 833 (1997). E. T. Yu, "Nanoscale Characterization of Semiconductor Materials and Devices Using Scanning Probe Techniques," Materials Science and Engineering Reports R17, 147 (1996). PDF reprint (5.34MB) A. Y. Lew, S.-L. Zuo, E. T. Yu, and R. H. Miles, "Anisotropy and Growth-Sequence Dependence of Atomic-Scale Interface Structure in InAs/Ga1-xInxSb Superlattices," Appl. Phys. Lett. 70, 75 (1997). PDF reprint Q. Z. Liu, L. Shen, K. V. Smith, E. T. Yu, S. S. Lau, N. R. Perkins, and T. F. Kuech, "Epitaxy of Al Films on GaN Studied by Reflection High Energy Electron Diffraction and Atomic Force Microscopy," Appl. Phys. Lett. 70, 990 (1997). PDF reprint B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, "Measurement of Band Offsets in Si/Si1-xGex and Si1-x-yGexCy Heterojunctions," J. Vac. Sci. Technol. B 15, 1108 (1997). E. T. Yu, "Cross-Sectional Scanning Tunneling Microscopy," Chemical Reviews 97, 1017 (1997). PDF reprint P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. M. Redwing, "Piezoelectric Charge Densities in AlGaN/GaN HFET's," Electronics Letters 33, 1230 (1997). PDF reprint E. T. Yu and S. J. Pennycook, "Nanoscale Characterization of Materials," MRS Bulletin 22, 17 (1997). E. T. Yu, "Atomic-Scale Characterization of Semiconductor Heterostructures By Cross-Sectional Scanning Tunneling Microscopy," MRS Bulletin 22, 22 (1997). A. Y. Lew, S. L. Zuo, E. T. Yu, D. H. Chow, and R. H. Miles, "Correlation Between Atomic-Scale Structure and Mobility Anisotropy in InAs/Ga1-xInxSb Superlattices," Phys. Rev. B 57, 6534 (1998). PDF reprint E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, "Measurement of Piezoelectrically Induced Charge in GaN/AlGaN Heterostructure Field-Effect Transistors," Appl. Phys. Lett. 71, 2794 (1997). PDF reprint B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, A. E. Bair, J. W. Mayer, and C. C. Ahn, "Electronic Properties of Si/Si1-x-yGexCy Heterojunctions," J. Vac. Sci. Technol. B 16, 1639 (1998). PDF reprint S. L. Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, "Atomic Scale Compositional Structure of InAsP/InP and InNAsP/InP Heterostructures Grown by Molecular-Beam Epitaxy," J. Vac. Sci. Technol. B 16, 2395 (1998). PDF reprint C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. Botchkarev, and H. Morkoc, "Deep level defects in n-type GaN grown by molecular-beam epitaxy," Appl. Phys. Lett. 72, 1211 (1998). PDF reprint S. L Zuo, W. G. Bi, C. W. Tu, and E. T. Yu, "A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures," Appl. Phys. Lett. 72, 2135 (1998). PDF reprint E. T. Yu, S. L. Zuo, W. G. Bi, and C. W. Tu, "Cross-Sectional Scanning Tunneling Microscopy of Atomic-Scale Structure in Semiconductor Heterostructures," Micron 30, 51 (1999). PDF reprint X. Z. Dang, D. J. Qiao, C. D. Wang, L.S. Yu, S. S. Lau, E. T. Yu, and J. M. Redwing, "Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures," Appl. Phys. Lett. 72, 2745 (1998). PDF reprint B. L. Stein, E. T. Yu, E. T. Croke, A. T. Hunter, T. Laursen, J. W. Mayer, and C. C. Ahn, "Deep-level transient spectroscopy of Si/SiGeC heterostructures," Appl. Phys. Lett. 73, 647 (1998). PDF reprint E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, "Schottky barrier engineering in III-V nitrides via the piezoelectric effect," Appl. Phys. Lett. 73, 1880 (1998). PDF reprint D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, "Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy," Appl. Phys. Lett. 74, 472 (1999). PDF reprint C. H. Yun, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, "Transfer of patterned ion-cut silicon layers," Appl. Phys. Lett. 73, 2772 (1998). PDF reprint C. Shi, P. M. Asbeck, and E. T. Yu, "Piezoelectric polarization associated with dislocations in wurtzite GaN," Appl. Phys. Lett. 74, 573 (1999). PDF reprint S. L. Zuo, E. T. Yu, A. A. Allerman, and R. M. Biefeld, "Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices," J. Vac. Sci. Technol. B 17, 1781 (1999). PDF reprint E. T. Yu, P. M. Asbeck, S. S. Lau, X. Z. Dang, and G. J. Sullivan, "Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures," J. Vac. Sci. Technol. B 17, 1742 (1999). PDF reprint E. T. Yu, S. L. Zuo, W. G. Bi, C. W. Tu, A. A. Allerman, and R. M. Biefeld, "Nanometer-scale compositional structure in III-V semiconductor heterostructures characterized by scanning tunneling microscopy," J. Vac. Sci. Technol. A 17, 2246 (1999). PDF reprint X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros, and J. M. Redwing, "Fabrication and characterization of enhanced barrier AlGaN/GaN heterostructure field-effect transistor," Electronics Letters 35, 602 (1999). PDF reprint X. Z. Dang, P. M. Asbeck, E. T. Yu, G. J. Sullivan, M. Y. Chen, B. T. McDermott, K. S. Boutros, and J. M. Redwing, "Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor," Appl. Phys. Lett. 74, 3890 (1999). PDF reprint P. M. Asbeck, E. T. Yu, S. S. Lau, W. Sun, X. Dang, and C. Shi, "Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBT's," Solid State Electronics 44, 211 (2000). PDF reprint D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, "A monolithic field-effect-transistor-amplified magnetic field sensor," Appl. Phys. Lett. 75, 731 (1999). PDF reprint K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures," Appl. Phys. Lett. 75, 2250 (1999). PDF reprint P. A. Rosenthal, E. T. Yu, R. L. Pierson, and P. J. Zampardi, "Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy," J. Appl. Phys. 87, 1937 (2000). PDF reprint K. V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, "Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy," J. Elec. Mater. 29, 274 (2000). PDF preprint D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, "Proximal probe characterization of nanoscale charge transport properties in Co/SiO2 multilayer structures," J. Elec. Mater. 29, 1299 (2000). PDF reprint D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz, "Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing," J. Vac. Sci. Technol. A 18, 1834 (2000). PDF reprint E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, E. T. Yu, G. J. Sullivan, and J. M. Redwing, "Trap characterization by gate-drain conductance and capacitance dispersion studies in an AlGaN/GaN HFET," J. Appl. Phys. 87, 8070 (2000). PDF reprint K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, "Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy," J. Vac. Sci. Technol. B 18, 2304 (2000). PDF reprint E. J. Miller, X. Z. Dang, and E. T. Yu, "Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors," J. Appl. Phys. 88, 5951 (2000). PDF reprint K. V. Smith, E. T. Yu, C. Elsass, B. Heying, and J. S. Speck, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy," Appl. Phys. Lett. 79, 2749 (2001). PDF reprint D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, "Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor," Appl. Phys. Lett. 78, 88 (2001). PDF reprint X. Z. Dang, E. T. Yu, E. J. Piner, and B. T. McDermott, "Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures," J. Appl. Phys. 90, 1357 (2001). PDF reprint D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, "Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure," J. Vac. Sci. Technol. B 19, 1671 (2001). PDF reprint E. J. Miller and E. T. Yu, "Influence of the dipole interaction energy on clustering in InxGa1-xN alloys," Appl. Phys. Lett. 78, 2303 (2001). PDF reprint B. B. Maranville, A. L. Shapiro, F. Hellman, D. M. Schaadt, and E. T. Yu, "Miscut-angle dependence of perpendicular magnetic anisotropy in thin epitaxial CoPt3 films grown on vicinal MgO," Appl. Phys. Lett. 81, 517 (2002). PDF reprint L. Jia, E. T. Yu, D. Keogh, S. S. Lau, P. M. Asbeck, P. Miraglia, A. Roskowski, and R. F. Davis, "Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures," Appl. Phys. Lett. 79, 2916 (2001). PDF reprint E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope," J. Appl. Phys. 91, 9821 (2002). PDF reprint B. S. Simpkins, D. M. Schaadt, E. T. Yu, and R. J. Molnar, "Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy," J. Appl. Phys. 91, 9924 (2002). PDF reprint S. L. Zuo, Y. G. Hong, C. W. Tu, E. T. Yu, and J. F. Klem, "Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures," J. Appl. Phys. 92, 3761 (2002). PDF reprint E. J. Miller, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, "Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance-voltage carrier profiling," Appl. Phys. Lett. 80, 3551 (2002). PDF reprint D. M. Schaadt and E. T. Yu, "Scanning capacitance spectroscopy of an AlGaN/GaN heterostructure field-effect transistor: analysis of probe tip effects," J. Vac. Sci. Technol. B 20, 1671 (2002). PDF reprint E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, and J. S. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment," Appl. Phys. Lett. 82, 1293 (2003). PDF reprint P. A. Rosenthal, Y. Taur, and E. T. Yu, "Direct measurement and characterization of n+ super-halo implants in a 120 nm gate-length Si metal-oxide-semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy," Appl. Phys. Lett. 81, 3993 (2002). PDF reprint B. S. Simpkins and E. T. Yu, "Influence of AlN Buffer on Electronic Properties and Dislocation Microstructure of AlGaN/GaN Grown by Molecular Beam Epitaxy on SiC," J. Vac. Sci. Technol. B 21, 1818 (2003). PDF reprint B. S. Simpkins, E. T. Yu, P. Waltereit, and J. S. Speck, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride," J. Appl. Phys. 94, 1448 (2003). PDF reprint E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy," J. Appl. Phys. 94, 7611 (2003). PDF reprint E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, "Analysis of reverse bias leakage current mechanisms in GaN grown by molecular beam epitaxy," Appl. Phys. Lett. 84, 535 (2004). PDF reprint B. S. Simpkins, E. T. Yu, U. Chowdhury, M. M. Wong, T. G. Zhu, D. W. Yoo, and R. D. Dupuis, "Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN," J. Appl. Phys. 95, 6225 (2004). PDF reprint H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, "Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures," J. Vac. Sci. Technol. B 22, 2169 (2004). PDF reprint H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, "Measurement of polarization charge and conduction band offset at InxGa1-xN/GaN heterojunction interfaces," Appl. Phys. Lett. 84, 4644 (2004). PDF reprint D. M. Schaadt, E. T. Yu, V. Vaithyanathan, and D. G. Schlom, "Nanoscale current transport in epitaxial SrTiO3 on n+-Si (001) investigated with conductive atomic force microscopy," J. Vac. Sci. Technol. B 22, 2030 (2004). PDF reprint X. Zhou, E. T. Yu, D. Florescu, J. C. Ramer, D. S. Lee, and E. A. Armour, "Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy," Appl. Phys. Lett. 85, 407 (2004). PDF reprint D. M. Schaadt, B. Feng, and E. T. Yu, "Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles," Appl. Phys. Lett. 86, 063106 (2005). PDF reprint X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, "Observation of In concentration variations in InGaN/GaN quantum-well heterostructures by scanning capacitance microscopy," Appl. Phys. Lett. 86, 202113 (2005). PDF reprint X. Zhou, E. T. Yu, D. I. Florescu, J. C. Ramer, D. S. Lee, S. M. Ting, and E. A. Armour, "Imaging of thickness and compositional fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy," J. Vac. Sci. Technol. B 23, 1808 (2005). PDF reprint H. Zhang, E. J. Miller, and E. T. Yu, "Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy," J. Appl. Phys. 99, 023703 (2006). PDF reprint H. Zhang and E. T. Yu, "Demonstration and analysis of reduced reverse bias leakage current via design of nitride semiconductor heterostructures grown by molecular beam epitaxy," J. Appl. Phys. 99, 014501 (2006). PDF reprint X. Zhou, E. T. Yu, D. S. Green, and J. S. Speck, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries," J. Vac. Sci. Technol. B 24, 245 (2006). PDF reprint B. S. Simpkins, H. Zhang, and E. T. Yu, "Defects in nitride semiconductors: From nanoscale imaging to macroscopic device behavior," Mater. Sci. Semicond. Processing, 9, 308 (2006). PDF reprint S. Raychaudhuri and E. T. Yu, "Critical dimensions in coherently strained coaxial nanowire heterostructures," J. Appl. Phys. 99, 114308 (2006). PDF reprint X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, "Scanned electrical probe characterization of carrier transport behavior in InAs nanowires," J. Vac. Sci. Technol. B 24, 2036 (2006). PDF reprint S. Raychaudhuri and E. T. Yu, "Calculation of critical dimensions for wurtzite and cubic zincblende coaxial nanowire heterostructures," J. Vac. Sci. Technol. B 24, 2053 (2006). PDF reprint X. Zhou, S. A. Dayeh, D. Aplin, D. Wang, and E. T. Yu, "Direct observation of ballistic and drift carrier transport regimes in InAs nanowires," Appl. Phys. Lett. 89, 053113 (2006). PDF reprint D. Derkacs, S. H. Lim, P. Matheu, W. Mar, and E. T. Yu, "Improved performance of amorphous silicon solar cells via scattering from surface plasmon polaritons in nearby metallic nanoparticles," Appl. Phys. Lett. 89, 093103 (2006). PDF reprint S. A. Dayeh, D. P. R. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, "High electron mobility InAs nanowire field-effect transistors," Small 3, 326 (2007). PDF reprint S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, "Influence of surface states on the extraction of transport parameters from InAs nanowire field-effect transistors," Appl. Phys. Lett. 90, 162112 (2007). PDF reprint S. H. Lim, W. Mar, P. Matheu, D. Derkacs, and E. T. Yu, "Photocurrent spectroscopy of optical absorption enhancement in silicon photodiodes via scattering from surface plasmon polaritons in gold nanoparticles," J. Appl. Phys. 101, 104309 (2007). PDF reprint X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, "Analysis of local carrier modulation in InAs nanowire field-effect transistors," J. Vac. Sci. Technol. B 25, 1427 (2007). PDF reprint S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, "Transport properties of InAs nanowire field-effect transistors: the effects of surface states," J. Vac. Sci. Technol. B 25, 1432 (2007). PDF reprint X. Zhou, S. A. Dayeh, D. Wang, and E. T. Yu, "Scanning gate microscopy of InAs nanowires," Appl. Phys. Lett. 90, 233118 (2007). PDF reprint S. A. Dayeh, E. T. Yu, and D. Wang, "III-V nanowire growth mechanism: V/III ratio and temperature effects," Nano Lett. 7, 2486 (2007). PDF reprint S. A. Dayeh, E. T. Yu, and D. Wang, "Excess indium and substrate effects on the growth of InAs nanowires," Small 3, 1683 (2007). PDF reprint S. A. Dayeh, E. T. Yu, and D. Wang, "Growth of InAs nanowires on SiO2 substrates: nucleation, evolution and role of Au nanoparticles," J. Phys. Chem. C 111, 13331 (2007). PDF reprint J. J. M. Law, E. T. Yu, B. A. Haskell, P. T. Fini, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy," J. Appl. Phys. 103, 014305 (2008). PDF reprint C. J. Novotny, E. T. Yu, and P. K. L. Yu, "InP nanowire/polymer hybrid photodiode," Nano Lett. 8, 775 (2008). PDF reprint B. Conference Proceedings, Book Publications, Etc. (Partial List)