Paul A. Rosenthal
Graduate Student Researcher
UCSD Materials Science and Engineering

University of California, San Diego
9500 Gilman Drive, Mail Code 0418
La Jolla, CA. 92093-0418

Work (858) 534-0021
Fax. (858) 534-0556
e-mail: prosenthal@ucsd.edu

Office: Engineering Building Unit 1 (EBU-1) Room 3504

I am a candidate for the Ph. D. degree in Materials Science and Engineering, working in Prof. Edward T. Yu's Nanoscale Characterization and Devices Laboratory . I anticipate completing my Ph. D. degree in June, 2002.

Our research is concentrated on nanoscale surface and electrical characterization of group IV and group III-V semiconductor materials and device structures using scanning probe microscopy techniques. Specifically, we are using cross-sectional scanning capacitance microscopy (SCM) to study 2-D dopant distribution and p-n junction delineation in focused ion beam (FIB) implanted Si.

We have also performed cross-sectional SCM studies of deep-submicron Si transistor structures with unique and complex 2-D channel doping profiles including n+ super-halo implants. The SCM technique allows direct measurement of the apparent channel length, where currently utilized methods of electrical device characterization extract unrealistically large values. These studies represent the first direct imaging of n+ super-halo implants using SCM, and the first direct measurement of the apparent channel length in these devices.

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Publications and Conferences

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Related Links:

UCSD Edward Yu Lab	Cal Poly Materials Engineering
UCSD Materials Science and Engineering	Solectron Corporation

Last updated:
May 21, 2002
Paul A. Rosenthal
prosenthal@ucsd.edu

Some Interesting Images...

Cross-sectional SCM image of FIB implanted Si

Cross-sectional SCM image of a deep-submicron Si p-MOSFET